DOPANT DIFFUSION IN TUNGSTEN SILICIDE

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[3] GIBBONS JF, 1978, APPL PHYS LETT, V33, P76

[4] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[5] NESBIT L, COMMUNICATION

[6] SMITH AM, 1964, RTI ASDTDR63316 REP, V4

[7] TSAI MY, 1981, SEMICONDUCTOR SILICO, P573

[8] Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

[9] OXIDATION MECHANISMS IN WSI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 76 - 78

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424

[3] GIBBONS JF, 1978, APPL PHYS LETT, V33, P76

[4] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[5] NESBIT L, COMMUNICATION

[6] SMITH AM, 1964, RTI ASDTDR63316 REP, V4

[7] TSAI MY, 1981, SEMICONDUCTOR SILICO, P573

[8] Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

[9] OXIDATION MECHANISMS IN WSI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 76 - 78