FORMATION OF PALLADIUM SILICIDE BY RAPID THERMAL ANNEALING

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] CHEUNG N, 1983, P S THIN FILMS INTER, V80

[3] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[4] COOPER CB, 1983, UNPUB P MATERIAL RES

[5] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[6] HOPKINS CG, 1983, UNPUB P MATERIAL RES

[7] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109

[8] LARSEN AN, 1983, UNPUB P MATERIAL RES

[9] NARAYAN J, 1983, UNPUB P MATERIAL RES

[10] GROWTH-KINETICS AND DIFFUSION MECHANISM IN PD2SI [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1173 - 1179

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] CHEUNG N, 1983, P S THIN FILMS INTER, V80

[3] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[4] COOPER CB, 1983, UNPUB P MATERIAL RES

[5] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[6] HOPKINS CG, 1983, UNPUB P MATERIAL RES

[7] TRANSIENT ENHANCED DIFFUSION IN ARSENIC-IMPLANTED SHORT-TIME ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 107 - 109

[8] LARSEN AN, 1983, UNPUB P MATERIAL RES

[9] NARAYAN J, 1983, UNPUB P MATERIAL RES

[10] GROWTH-KINETICS AND DIFFUSION MECHANISM IN PD2SI [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1173 - 1179