GROWTH-KINETICS AND DIFFUSION MECHANISM IN PD2SI

[1] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1732 - 1736

[2] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[5] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402

[6] Chu WK., 1978, BACKSCATTERING SPECT

[7] GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 417 - 419

[8] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[9] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[10] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[1] EFFECT OF OXIDIZING AMBIENTS ON PLATINUM SILICIDE FORMATION .2. AUGER AND BACKSCATTERING ANALYSES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1732 - 1736

[2] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[4] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[5] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402

[6] Chu WK., 1978, BACKSCATTERING SPECT

[7] GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 417 - 419

[8] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[9] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[10] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12