3-LAYER 1.3 MU-M IN1-XGAXASYP1-Y LASERS WITH QUATERNARY CONFINING LAYERS

被引：13

作者：

PRINCE, FC

PATEL, NB

CHANG, SL

BULL, DJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：597 / 602

页数：6

共 12 条

[1]

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[3] DETERMINATION OF LATTICE MISMATCH IN GA1-XALXAS LPE LAYER ON GAAS SUBSTRATE BY USING A DIVERGENT X-RAY SOURCE [J].

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[4]

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[6] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

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[7] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

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[8] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

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[9] LATTICE DEFORMATIONS AND MISFIT DISLOCATIONS IN GALNASP-INP DOUBLE-HETEROSTRUCTURE LAYERS [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (11) :962-964

[10] ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND 5-LAYER HETEROSTRUCTURE (GAAL)AS-GAAS INJECTION LASERS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :481-488

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