DETERMINATION OF LATTICE MISMATCH IN GA1-XALXAS LPE LAYER ON GAAS SUBSTRATE BY USING A DIVERGENT X-RAY SOURCE

被引:8
作者
CHANG, SL
PATEL, NB
NANNICHI, Y
PRINCE, FCD
机构
[1] Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13.100-Campinas, S.P.
关键词
D O I
10.1063/1.326179
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new method of determining lattice mismatch in LPE heterojunction systems has been developed by utilizing a divergent x-ray source. The experimental arrangements and operation procedures are much simpler than those of the usual x-ray methods.
引用
收藏
页码:2975 / 2976
页数:2
相关论文
共 9 条
[1]   DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].
DELOACH, BC ;
HAKKI, BW ;
HARTMAN, RL ;
DASARO, LA .
PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044
[2]   DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].
ESTOP, E ;
IZRAEL, A ;
SAUVAGE, M .
ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&
[3]   THERMAL EXPANSION OF ALAS [J].
ETTENBERG, M ;
PAFF, RJ .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+
[4]   STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].
HARTMAN, RL ;
HARTMAN, AR .
APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149
[5]   EXPERIMENTAL METHODS FOR STUDY OF MULTIPLE BORRMANN DIFFRACTION [J].
HUANG, TC ;
POST, B .
ACTA CRYSTALLOGRAPHICA SECTION A, 1973, 29 (JAN1) :35-&
[6]   INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J].
REINHART, FK ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3171-3175
[7]   X-RAY DETERMINATION OF STRESSES IN THIN-FILMS AND SUBSTRATES BY AUTOMATIC BRAGG ANGLE CONTROL [J].
ROZGONYI, GA ;
CIESIELK.TJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (08) :1053-1057
[8]   STRESS COMPENSATION IN GA1-XALXAS1-YPY LPE LAYERS ON GAAS SUBSTRATES [J].
ROZGONYI, GA ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1973, 23 (10) :533-535
[9]  
ROZGONYI GA, 1973, J ELECTROCHEM SOC, V120, pC333