CORROSION AND PROTECTION OF THIN-LINE CONDUCTORS IN VLSI STRUCTURES

被引:8
作者
BRUSIC, V
FRANKEL, GS
HU, CK
PLECHATY, MM
SCHWARTZ, GC
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DEPT SILICON TECHNOL,DIV RES,YORKTOWN HTS,NY 10598
[2] IBM CORP,THOMAS J WATSON RES CTR,DEPT PHYS SCI,DIV RES,MAT CHARACTERIZAT GRP,YORKTOWN HTS,NY 10598
[3] IBM TECHNOL PROD,E FISHKILL FACIL,HOPEWELL JCT,NY 12533
关键词
D O I
10.1147/rd.372.0173
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Thin metallic lines in VLSI circuit structures are usually encapsulated in a dielectric in order to protect them from the atmosphere and prevent corrosion. However, during processing the lines are unprotected. Some of the steps to which they are subjected during processing are quite aggressive and can result in a significant yield loss. This paper pertains to the loss which is due to corrosion during processing. It focuses on the corrosion behavior of the two of the most commonly used conductors, aluminum and copper. Aluminum alloyed with small amounts of copper is also considered. The corrosion-related behaviors of aluminum and copper are vastly different, as is shown by their reaction with water and several processing solutions. The challenge of minimizing corrosion during processing as well as during subsequent storage and use is discussed, using suitable examples drawn from studies of thin films of the metals exposed to chemical etching, reactive ion etching, and cleaning.
引用
收藏
页码:173 / 189
页数:17
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