OPTICAL-PROPERTIES OF SEMICONDUCTOR-LASERS WITH HYDROSTATIC-PRESSURE

The pressure dependence of the stimulated emission of a 1.3 mum In1-xGaxAsyP1-y (y=0.6) buried heterostructure laser has been measured up to 2.5 GPa. In this pressure range the laser output was tuned over 200 nm. The laser output energy varied linearly with pressure at a rate of (80+/-3) meV/GPa, corresponding to variation of the direct band gap of the InGaAsP active layer with pressure. From the measured energy shift and from calculations of the fractional volume change in the active layer for the strain conditions of the epilayer, a hydrostatic deformation potential of (-5.7+/-0.1) eV was obtained.