PRESSURE-DEPENDENCE OF THRESHOLD CURRENT AND CARRIER LIFETIME IN 1.55-MU-M GAINASP LASERS

被引：3

作者：

HEASMAN, KC ^{[1
]}

ADAMS, AR ^{[1
]}

GREENE, PD ^{[1
]}

HENSHALL, GD ^{[1
]}

机构：

[1] STC TECHNOL LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 10期

关键词：

D O I：

10.1049/el:19870357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：492 / 493

页数：2

共 14 条

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[6]

HENRY CH, 1983, IEEE J QUANTUM ELECT, V19, P905, DOI 10.1109/JQE.1983.1071997

[7]

HORIKOSHI Y, 1982, GAINASP ALLOY SEMICO, pCH15

[8] EFFECT OF P-DOPING ON CARRIER LIFETIME AND THRESHOLD CURRENT-DENSITY OF 1.3-MUM GAINASP-INP LASERS BY LIQUID-PHASE EPITAXY [J].

NG, W ;

LIU, YZ .

ELECTRONICS LETTERS, 1980, 16 (18) :693-695

[9] PRESSURE-DEPENDENCE OF THRESHOLD CURRENT IN GAXIN1-XASYP1-Y LASERS [J].

PATEL, D ;

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GREENE, PD ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1982, 18 (12) :527-528

[10] MEASUREMENT OF SPONTANEOUS CARRIER LIFETIME FROM STIMULATED EMISSION DELAYS IN SEMICONDUCTOR LASERS [J].

RIPPER, JE .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1762-+

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