EFFECT OF P-DOPING ON CARRIER LIFETIME AND THRESHOLD CURRENT-DENSITY OF 1.3-MUM GAINASP-INP LASERS BY LIQUID-PHASE EPITAXY

被引：16

作者：

NG, W

LIU, YZ

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 18期

关键词：

D O I：

10.1049/el:19800492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：693 / 695

页数：3

共 8 条

[1] BE DOPING OF LIQUID-PHASE-EPITAXIAL INP [J].

ABRAMS, EB ;

SUMSKI, S ;

BONNER, WA ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4469-4470

[2] ZINC CONTAMINATION AND MISPLACED P-N-JUNCTIONS IN INP-GAINPAS DH LASERS [J].

COLEMAN, JJ ;

NASH, FR .

ELECTRONICS LETTERS, 1978, 14 (17) :558-559

[3] MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS [J].

DYMENT, JC ;

LEE, TP ;

RIPPER, JE .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :452-+

[4] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS [J].

HWANG, CJ ;

DYMENT, JC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3240-3244

[5] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].

ITAYA, Y ;

SUEMATSU, Y ;

KATAYAMA, S ;

KISHINO, K ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1795-1805

[6] THRESHOLD DEPENDENCE ON ACTIVE-LAYER THICKNESS IN INGAASP-INP DH LASERS [J].

NAHORY, RE ;

POLLACK, MA .

ELECTRONICS LETTERS, 1978, 14 (23) :727-729

[7]

ROSENTAL A, 1979, JPN J APPL PHYS, V17, P1655

[8] THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS [J].

YANO, M ;

NISHI, H ;

TAKUSAGAWA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :571-579

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