THEORETICAL AND EXPERIMENTAL-STUDY OF THRESHOLD CHARACTERISTICS IN INGAASP-INP DH LASERS

Threshold characteristics of stripe-geometry InGaAsP/lnP double-heterostructure injection lasers have been analytically derived as a function of active layer thickness and stripe width. The effects of stripe width, refractive index in the active layer, diffusion of injected carriers, carrier lifetime, absorption loss in the cladding layer, gain coefficient, and cavity length on the optimum thickness of the active layer which gives minimum threshold or on threshold current density were studied. These lasers were fabricated on (100) oriented InP substrates, and their oscillation properties are discussed in comparison with the results of analysis. Optimum thickness of the active layer (≅0.2μm) obtained theoretically showed good agreement with experimentally derived values. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.