MOCVD GROWTH AND CHARACTERIZATION BY RAMAN-SCATTERING, X-RAY-DIFFRACTION AND AUGER-SPECTROSCOPY OF SHORT-PERIOD GAAS/ALAS AND GAAS/GA1-XALXAS SUPERLATTICES

被引：19

作者：

AZOULAY, R

JUSSERAND, B

LEROUX, G

OSSART, P

DUGRAND, L

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90350-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：546 / 552

页数：7

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[1] MOCVD N-TYPE DOPING OF GAAS AND GAALAS USING SILICON AND SELENIUM AND FABRICATION OF DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTOR
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 431 - 436
[8] MORI Y, 1983, 15TH C SOL STAT DEV
[9] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES
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