DENSIFICATION AND POROSITY IN LOW-TEMPERATURE-DEPOSITED OXIDE

[1] ARNDT J, 1969, PHYS CHEM GLASSES, V10, P117

[2] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[3] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[4] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2536 - 2542

[5] SI-O BOND-LENGTH MODIFICATION IN PRESSURE-DENSIFIED AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9376 - 9379

[6] CORRELATED DEFECT CREATION AND DOSE-DEPENDENT RADIATION SENSITIVITY IN AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5132 - 5138

[7] DENSIFICATION-INDUCED INFRARED AND RAMAN-SPECTRA VARIATIONS OF AMORPHOUS SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (06): : 3154 - 3156

[8] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 819 - 823

[9] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[10] FERRIEU F, 1989, J SCI I OCT

[1] ARNDT J, 1969, PHYS CHEM GLASSES, V10, P117

[2] LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3136 - 3145

[3] ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 148 - 150

[4] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2536 - 2542

[5] SI-O BOND-LENGTH MODIFICATION IN PRESSURE-DENSIFIED AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1987, 35 (17): : 9376 - 9379

[6] CORRELATED DEFECT CREATION AND DOSE-DEPENDENT RADIATION SENSITIVITY IN AMORPHOUS SIO2 [J]. PHYSICAL REVIEW B, 1989, 39 (08): : 5132 - 5138

[7] DENSIFICATION-INDUCED INFRARED AND RAMAN-SPECTRA VARIATIONS OF AMORPHOUS SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (06): : 3154 - 3156

[8] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 819 - 823

[9] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[10] FERRIEU F, 1989, J SCI I OCT