A POSITRON-ANNIHILATION AND HALL-EFFECT STUDY OF VACANCY DEFECTS IN III-V-COMPOUND SEMICONDUCTORS - .1. GALLIUM-PHOSPHIDE

被引：21

作者：

KRAUSEREHBERG, R ^{[1
]}

POLITY, A ^{[1
]}

SIEGEL, W ^{[1
]}

KUHNEL, G ^{[1
]}

机构：

[1] BERGAKAD FREIBERG,FACHBEREICH PHYS,O-9200 FREIBERG,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期

关键词：

D O I：

10.1088/0268-1242/8/2/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Positron lifetime and Hall effect measurements have been performed to study vacancy defects in GaP. No Ga vacancies have been detected, while P vacancies have always been found in as-grown material. They show at least two different ionization levels within the upper half of the bandgap, which have been attributed to V(P)+/V(P)0 at E(C) - E(D) > 400 meV and V(P)0/V(P)- at E(C) - E(D) = 250 +/- 30 meV, respectively. The concentration of the P vacancies in the as-grown samples was found to be in the order of some 10(16) cm-3 . The specific positron trapping rate for negatively charged P vacancies was determined as mu(v)P = (1.9 +/- 0.5) x 10(15) s-1.

引用

页码：290 / 297

页数：8

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