共 15 条
[1]
[Anonymous], 1983, POSITRON SOLID STATE
[4]
INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION
[J].
PHYSICAL REVIEW B,
1984, 30 (06)
:3355-3366
[5]
STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS
[J].
PHYSICAL REVIEW B,
1981, 24 (04)
:2051-2068
[6]
POSITRON STUDY OF NATIVE VACANCIES IN DOPED AND UNDOPED GAAS
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1986, 19 (03)
:331-344
[7]
VACANCY-ZN COMPLEXES IN INP STUDIED BY POSITRONS
[J].
APPLIED PHYSICS LETTERS,
1985, 46 (12)
:1136-1138
[9]
HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI, V12