RADIATION-INDUCED SHALLOW DONORS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS SATURATED WITH HYDROGEN

被引：40

作者：

MARKEVICH, VP ^{[1
]}

SUEZAWA, M ^{[1
]}

SUMINO, K ^{[1
]}

MURIN, LI ^{[1
]}

机构：

[1] MINSK SOLID STATE & SEMICOND PHYS INST, MINSK 220072, BELARUS

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.357958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Far-infrared absorption has been investigated in n-type Czochralski-grown silicon saturated with hydrogen and then irradiated with fast electrons. Two series of absorption bands in the range 200-330 cm-1 are observed upon postirradiation annealing of the crystals at 300-550°C. These bands are associated with ground-to-excited-state electronic transitions in two kinds of shallow donors with ionization energies of 37.0 and 42.6 meV, which are described well with the effective-mass approximation. These donors are related to defects observed earlier in electrical measurements. © 1994 American Institute of Physics.

引用

页码：7347 / 7350

页数：4

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