REVERSIBLE TRANSFORMATION OF DEFECTS IN HYDROGEN-IMPLANTED SILICON

被引:33
作者
GORELKINSKII, Y
NEVINNYI, NN
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期
关键词
D O I
10.1016/0167-5087(83)90866-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
23
引用
收藏
页码:677 / 682
页数:6
相关论文
共 23 条
  • [1] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON
    BROWER, KL
    [J]. PHYSICAL REVIEW B, 1976, 14 (03): : 872 - 883
  • [2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
    CHENG, LJ
    CORELLI, JC
    CORBETT, JW
    WATKINS, GD
    [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +
  • [3] DISTRIBUTION OF IRRADIATION DAMAGE IN SILICON BOMBARDED WITH HYDROGEN
    CHU, WK
    KASTL, RH
    LEVER, RF
    MADER, S
    MASTERS, BJ
    [J]. PHYSICAL REVIEW B, 1977, 16 (09) : 3851 - 3859
  • [4] ION-INDUCED DEFECTS IN SEMICONDUCTORS
    CORBETT, JW
    KARINS, JP
    TAN, TY
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 457 - 476
  • [5] NEW EPR SPECTRA IN IRRADIATED SILICON
    DALY, DF
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 864 - &
  • [6] FRANK W, 1979, I PHYS C SER, V46, P516
  • [7] THE SPATIAL-DISTRIBUTION OF SI INTERSTITIAL COMPLEX PRODUCED IN SILICON BY HYDROGEN-ION IMPLANTATION
    GORELKINSKII, YV
    NEVINNYI, NN
    BOTVIN, VA
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 49 (1-3): : 161 - 164
  • [8] EPR OF CONDUCTION ELECTRONS PRODUCED IN SILICON BY HYDROGEN-ION IMPLANTATION
    GORELKINSKII, YV
    SIGLE, VO
    TAKIBAEV, ZS
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (01): : K55 - K57
  • [9] GORELKINSKII YV, 1977, P INT C ION IMPLAT 1, P5
  • [10] HALLER EE, 1977, I PHYS C SERIES, V31, P309