CHARGE CARRIER STATISTICS OF SEMICONDUCTORS CONTAINING DEFECTS WITH NEGATIVE ELECTRONIC CORRELATION-ENERGY

被引：30

作者：

HOFFMANN, HJ

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 01期

关键词：

D O I：

10.1007/BF01197545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：39 / 47

页数：9

共 11 条

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[8] DEFECT-LEVEL ANALYSIS OF SEMICONDUCTORS BY A NEW DIFFERENTIAL EVALUATION OF N(1-T)-CHARACTERISTICS [J].

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