NEUTRON TRANSMUTATION DOPING OF SILICON AND OTHER SEMICONDUCTING MATERIALS

被引：7

作者：

HOFFMANN, HJ

机构：

来源：

关键词：

D O I：

10.1063/1.329255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4070 / 4074

页数：5

共 11 条

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KANE, EO ;

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[2]

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[3]

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[4] DENSITY OF LOCALIZED LEVELS IN AMORPHOUS SILICON [J].

HOFFMANN, HJ .

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[5]

HOFFMANN HJ, 1978, THESIS U KARLSRUHE

[6]

HUFF HR, 1977, SEMICONDUCTOR SILICO

[7]

Lark-Horovitz K., P47

[8]

Meese J.M., 1979, NEUTRON TRANSMUTATIO

MEESE, JM .

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO