DENSITY OF LOCALIZED LEVELS IN AMORPHOUS SILICON

被引：2

作者：

HOFFMANN, HJ

机构：

[1] Institut für angewandte Physik, Universität, Karlsruhe

来源：

APPLIED PHYSICS | 1979年 / 18卷 / 04期

关键词：

71.20; 71.55; 72.80;

D O I：

10.1007/BF00899699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The distribution of the localized levels g(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum of g(ε) is verified by this method to be in the order of 1017 to 1018 cm-3eV-1, whereas the maxima of g(ε), which have been reported in the literature, are not confirmed. © 1979 Springer-Verlag.

引用

页码：427 / 429

页数：3