NEUTRON TRANSMUTATION DOPING OF SILICON .1. ELECTRICAL PARAMETERS VERSUS FLUENCE

被引：6

作者：

MEESE, JM

机构：

[1] UNIV MISSOURI, DEPT PHYS, COLUMBIA, MO 65211 USA

[2] UNIV MISSOURI, DEPT ELECT ENGN, COLUMBIA, MO 65211 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3672 / 3676

页数：5

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