STRAINED-LAYER MULTIQUANTUM BARRIERS FOR REDUCING HOT-ELECTRON LEAKAGE IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

Multi-quantum barriers with a 1%-tensile-strained AlInAs/GaInAsP system are proposed for the purpose of suppressing the overflow leakage of hot electrons generated by the Auger effect. It is theoretically demonstrated for the first time that an effective barrier height of 1.2 eV, which is sufficient to confine hot electrons, can be obtained for 1.3 mum GaInAsP lasers. This implies that the overflow is almost suppressed, and dramatic improvement of high-temperature operation is expected.