NONCONTACT DOPING LEVEL DETERMINATION IN GAAS USING PHOTOREFLECTANCE SPECTROSCOPY - COMMENT

被引：1

作者：

BOTTKA, N

GASKILL, DK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4243 / 4244

页数：2

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