LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF TLINXGA1-XS2 LAYER MIXED-CRYSTALS

被引：11

作者：

ALLAKHVERDIEV, KR ^{[1
]}

GASANLY, NM ^{[1
]}

AYDINLI, A ^{[1
]}

机构：

[1] BILKENT UNIV,DEPT PHYS,BILKENT 06533,TURKEY

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期

关键词：

SEMICONDUCTORS; FERROELECTRICS; OPTICAL PROPERTIES; PHASE TRANSITIONS; LUMINESCENCE;

D O I：

10.1016/0038-1098(95)00037-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low-temperature photoluminescence spectra of TlInS2, TlIn0.95 Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel.

引用

页码：777 / 782

页数：6

共 16 条

[1]

ABDULLAEV GB, 1983, JETP LETT+, V38, P632

[2]

ABUTALYBOV GI, 1982, SOV PHYS SEMICOND+, V16, P1348

[3]

Allakhverdiev K.R., 1994, TURK J PHYS, V18, P1

[4] PHOTOLUMINESCENCE OF TIINS2 AT LOW-TEMPERATURES [J].