ORIGIN OF SURFACE STATES

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD [J]. SURFACE SCIENCE, 1970, 20 (02) : 335 - &

[4] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[6] BASSETT GA, 1958, PHILOS MAG, V3, P72

[7] BAUER E, 1969, TECHNIQUES METAL RES, V2

[8] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +

[9] BOONSTRA AH, 1968, PHILIPS RES REPT S3

[10] AUGER ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1971, 25 (01) : 53 - +

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD [J]. SURFACE SCIENCE, 1970, 20 (02) : 335 - &

[4] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &

[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[6] BASSETT GA, 1958, PHILOS MAG, V3, P72

[7] BAUER E, 1969, TECHNIQUES METAL RES, V2

[8] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION [J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +

[9] BOONSTRA AH, 1968, PHILIPS RES REPT S3

[10] AUGER ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1971, 25 (01) : 53 - +