ELECTROSTATIC LAW FOR INTERFACES IN ABRUPT SEMICONDUCTOR HOMOSTRUCTURES

被引:8
作者
KUZNICKI, ZT
机构
关键词
D O I
10.1016/0040-6090(81)90628-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:169 / 179
页数:11
相关论文
共 16 条
[1]  
ADIROVICH EI, 1958, J TECH PHYS, V28, P55
[2]   OPTIMUM GROWTH-CONDITIONS IN SILICON VAPOR EPITAXY [J].
BORKOWICZ, J ;
KOREC, J ;
NOSSARZEWSKAORLOWSKA, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :225-228
[3]  
BORKOWICZ J, 1978, UNPUB
[4]   AN ACCURATE NUMERICAL ONE-DIMENSIONAL SOLUTION OF P-N JUNCTION UNDER ARBITRARY TRANSIENT CONDITIONS [J].
DEMARI, A .
SOLID-STATE ELECTRONICS, 1968, 11 (11) :1021-+
[5]   POTENTIAL AND ELECTRIC-FIELD AT METALLURGICAL BOUNDARY OF AN ABRUPT P-N SEMICONDUCTOR JUNCTION [J].
KENNEDY, DP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :988-994
[6]   MODEL OF SILICON EPITAXIAL-GROWTH IN SICL4-HC1-H2 SYSTEM BASED ON FLOW GRAPH [J].
KOREC, J .
JOURNAL OF CRYSTAL GROWTH, 1979, 46 (03) :362-370
[7]  
Korec J., 1977, Electron Technology, V10, P3
[8]  
Kuznicki Z., 1979, Electron Technology, V12, P89
[9]   TRANSITION REGIONS IN EPILAYER STRUCTURES [J].
KUZNICKI, ZT .
THIN SOLID FILMS, 1979, 57 (01) :L9-L10
[10]  
KUZNICKI ZT, 1978, B ACAD POL SCI TECH, V26, P259