MODEL OF SILICON EPITAXIAL-GROWTH IN SICL4-HC1-H2 SYSTEM BASED ON FLOW GRAPH

被引：10

作者：

KOREC, J

机构：

[1] Scientific-Research Centre of Semiconductors, 02-673 Warszawa

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 03期

关键词：

D O I：

10.1016/0022-0248(79)90084-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A flow graph method of CVD process modelling and its application to silicon epitaxial growth in the SiCl4-HCl-H2 system is presented. A theoretical formula is developed giving the dependence of gas phase etching and growth rate of silicon on process technological parameters. Experimental verification of the model is presented. © 1979.

引用

页码：362 / 370

页数：9

共 22 条

[1]

ALEXANDER EG, 1967, J ELECTROCHEM SOC, V114, pC65

[2] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4 [J].