MAGNETOSPECTRAL ANALYSIS OF TUNNELING PROCESSES IN A DOUBLE-QUANTUM-WELL TUNNELING STRUCTURE

被引:13
作者
RASCOL, JJL
MARTIN, KP
BENAMOR, S
HIGGINS, RJ
CELESTE, A
PORTAL, JC
TORABI, A
HARRIS, HM
SUMMERS, CJ
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
[2] INST NATL SCI APPL,F-31077 TOULOUSE,FRANCE
[3] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE
[4] GEORGIA INST TECHNOL,GEORGIA TECH RES INST,ATLANTA,GA 30332
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3733
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using high magnetic fields to tune the Landau-level separation through phonon energies, we identify the off-selection-rule tunneling processes in an AlxGa1-xAs/GaAs double-quantum-well tunneling structure. Different elastic and inelastic tunneling mechanisms are identified. The effective mass of the tunneling electrons is directly determined from the crossing point of the elastic and inelastic processes. We observe the field-induced suppression of the elastically scattered contribution to the peak tunneling current. An upper limit on the resonant part of the tunneling current is established. © 1990 The American Physical Society.
引用
收藏
页码:3733 / 3737
页数:5
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