AN IMPROVED DEFINITION FOR THE ONSET OF HEAVY INVERSION IN AN MOS STRUCTURE WITH NONUNIFORMLY DOPED SEMICONDUCTORS

被引：11

作者：

NISHIDA, M

AOYAMA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 07期

关键词：

D O I：

10.1109/T-ED.1980.20012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1222 / 1230

页数：9

共 9 条

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1081-1085

[7] CONCERNING ONSET OF HEAVY INVERSION IN MIS DEVICES [J].

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GORDON, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) :649-650

[8] ION-IMPLANTED THRESHOLD TAILORING FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

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[9] DETERMINATION OF SEMICONDUCTOR DOPING PROFILE RIGHT UP TO ITS SURFACE USING MIS CAPACITOR [J].

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