GAAS-OXIDE REMOVAL USING AN ELECTRON-CYCLOTRON RESONANCE HYDROGEN PLASMA

被引：59

作者：

LU, Z

SCHMIDT, MT

CHEN, D

OSGOOD, RM

HOLBER, WM

PODLESNIK, DV

FORSTER, J

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.104397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.

引用

页码：1143 / 1145

页数：3

共 23 条

[11]

GRANT H, 1981, SURF SCI, V105, P217

[12]

Holber W., 1989, HDB ION BEAM PROCESS, P21

[13]

KONDO N, 1988, AIP C P, V167

[14] REACTIVITY AND INTERFACE CHEMISTRY DURING SCHOTTKY-BARRIER FORMATION - METALS ON THIN NATIVE OXIDES OF GAAS INVESTIGATED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].