INFLUENCE OF BIAS SPUTTERED GLASS ON AVALANCHE BREAKDOWN

被引：3

作者：

BLOSE, WL

MAGILL, PJ

WALSH, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 02期

关键词：

D O I：

10.1116/1.571098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：167 / 169

页数：3

相关论文

共 8 条

[1] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING
DAVIDSE, PD
MAISSEL, LI
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 574 - &
[2] GROVE AS, 1967, PHYS TECHNOL S, P342
[3] CONTROL OF RF SPUTTERED FILM PROPERTIES THROUGH SUBSTRATE TUNING
LOGAN, JS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 172 - &
[4] METAL EDGE COVERAGE AND CONTROL OF CHARGE ACCUMULATION IN RF SPUTTERED INSULATORS
LOGAN, JS
MADDOCKS, FS
DAVIDSE, PD
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 182 - &
[5] Maissel L.I., 1970, HDB THIN FILM TECHNO
[6] PROPERTIES OF INSULATING THIN FILMS DEPOSITED BY RF SPUTTERING
PLISKIN, WA
DAVIDSE, PD
LEHMAN, HS
MAISSEL, LI
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (04) : 461 - &
[7] ARGON CONTENT OF SIO2 FILMS DEPOSITED BY RF SPUTTERING IN ARGON
SCHWARTZ, GC
JONES, RE
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) : 52 - &
[8] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH3