THERMAL-DECOMPOSITION OF A SILICON-FLUORIDE ADLAYER - EVIDENCE FOR SPATIALLY INHOMOGENEOUS REMOVAL OF A SINGLE MONOLAYER OF THE SILICON SUBSTRATE

被引:30
作者
ENGSTROM, JR
NELSON, MM
ENGEL, T
机构
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 11期
关键词
D O I
10.1103/PhysRevB.37.6563
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:6563 / 6566
页数:4
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共 16 条
[1]  
BAGUS PS, 1985, MATERIALS RES SOC S, V38, P179
[3]   MPI MS DETECTION OF SIF AND SIF2 RADICALS PRODUCED FROM THE REACTION OF F2 AND NF3 WITH SILICON [J].
DAGATA, JA ;
SQUIRE, DW ;
DULCEY, CS ;
HSU, DSY ;
LIN, MC .
CHEMICAL PHYSICS LETTERS, 1987, 134 (02) :151-155
[4]   KINETICS OF THE ADSORPTION OF O-2 AND OF THE DESORPTION OF SIO ON SI(100) - A MOLECULAR-BEAM, XPS, AND ISS STUDY [J].
DEVELYN, MP ;
NELSON, MM ;
ENGEL, T .
SURFACE SCIENCE, 1987, 186 (1-2) :75-114
[5]   DESIGN AND CONSTRUCTION OF A DIGITAL TEMPERATURE CONTROLLER FOR USE IN SURFACE STUDIES [J].
ENGSTROM, JR ;
WEINBERG, WH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1984, 55 (03) :404-409
[6]  
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[7]  
FREUND R, COMMUNICATION
[8]   SOFT-X-RAY PHOTOEMISSION-STUDY OF THE SILICON FLUORINE ETCHING REACTION [J].
MCFEELY, FR ;
MORAR, JF ;
HIMPSEL, FJ .
SURFACE SCIENCE, 1986, 165 (01) :277-287
[9]   SYNCHROTRON PHOTOEMISSION INVESTIGATION OF THE INITIAL-STAGES OF FLUORINE ATTACK ON SI SURFACES - RELATIVE ABUNDANCE OF FLUOROSILYL SPECIES [J].
MCFEELY, FR ;
MORAR, JF ;
SHINN, ND ;
LANDGREN, G ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1984, 30 (02) :764-770
[10]  
NELSON M, UNPUB