EXPERIMENTAL AND THEORETICAL STUDIES OF IV CHARACTERISTICS OF ZINC-DOPED SILICON P-N-JUNCTIONS USING THE EXACT DC CIRCUIT MODEL

被引：8

作者：

CHAN, PCH

SAH, CT

机构：

[1] Department of Electrical Engineering, University of Illinois

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 06期

关键词：

D O I：

10.1109/T-ED.1979.19521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：937 / 941

页数：5

共 20 条

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CHAN, PCH
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SAH, CT
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415
[6] THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON
HERMAN, JM
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1133 - 1139
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[8] HO AP, UNPUBLISHED
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