THERMALLY DETECTED OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE IN A GAAS/GAALAS MULTIQUANTUM-WELL SAMPLE

被引：15

作者：

BOFFETY, D ^{[1
]}

LEYMARIE, J ^{[1
]}

VASSON, A ^{[1
]}

VASSON, AM ^{[1
]}

BATES, CA ^{[1
]}

CHAMBERLAIN, JM ^{[1
]}

DUNN, JL ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multiquantum well (MQW) GaAs/GaAlAs system is studied by a non-conventional technique of thermally detected optical absorption (TD-OA) in which the sample temperature variation is measured by a germanium thermometer at 0.5 K. In such a sample, for which the holder and quantum well materials are the same, the QW transitions give rise to temperature minima. The latter are interpreted in terms of intensity variations of the energy reflected at the interfaces of the wells close to the excitonic recombinations. The TD-OA spectra corresponding to the n = 1 heavy-hole and light-hole excitonic transitions in the wells are examined, together with the spectra obtained by conventional photoluminescence. Doublet lines involving QW excited levels, a component of which is due to a transition only allowed by valence band mixing, are also detected as in photoluminescence excitation.

引用

页码：1408 / 1411

页数：4

共 16 条

[11] THERMAL DETECTION OF PARAMAGNETIC-RESONANCE [J].