1ST INVESTIGATION ON AN ULTRA-THIN INAS/INP SINGLE QUANTUM-WELL BY THERMALLY DETECTED OPTICAL-ABSORPTION SPECTROSCOPY

被引：26

作者：

VASSON, AM ^{[1
]}

VASSON, A ^{[1
]}

LEYMARIE, J ^{[1
]}

DISSEIX, P ^{[1
]}

BORING, P ^{[1
]}

GIL, B ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CNRS,URA 357,ETUD SEMICOND GRP,F-34095 MONTPELLIER 05,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期

关键词：

D O I：

10.1088/0268-1242/8/2/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A non-conventional technique of thermally detected optical adsorption (TD-OA) is used to study a strained InAs/InP quantum well with thickness between two and three monolayers. The spectrometer and TD cell are briefly described and the TD-OA spectra are presented. Three signals due to the InAs well are identified. The simple envelope-function approach is sufficient for the interpretation of these, which are attributed to transitions involving the heavy-hole levels. However, for the light-hole-related peak, a more sophisticated theory, taking into account the coupling between the light hole and spin-orbit split-off states, is necessary to fit the result.

引用

页码：303 / 306

页数：4

共 24 条

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