DETERMINATION OF THE VALENCE-BAND OFFSET OF GAAS-(GA,IN)P QUANTUM-WELLS BY PHOTOREFLECTANCE SPECTROSCOPY

被引：17

作者：

ARNAUD, G

BORING, P

GIL, B

GARCIA, JC

LANDESMAN, JP

LEROUX, M

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

[2] CNRS,PHYS SOLIDES & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.46.1886

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports on growth, characterization, and calculation of the electronic structure of GaAs-(Ga,In)P quantum wells, where the two semiconductors share neither a common anion nor a common cation. Metal organic molecular-beam epitaxy was the growth method that we used. The composition of the disordered alloy was close to 50 at. % indium. We have determined the valence-band offset in such structures. We have found DELTA-E(c)/DELTA-E(v) = 0.4, and have calculated the influence of the spin-orbit split-off states on the light-hole confinement. We found that these deep valence states significantly reduce the light-hole confinement.

引用

页码：1886 / 1888

页数：3

共 24 条

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