METAL ORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF GA0.5IN0.5P/GAAS QUANTUM-WELL STRUCTURES

High-quality GaAs/GaInP single and multi-quantum-well structures have been grown by metal organic molecular beam epitaxy. Wells as thin as 10 angstrom have been grown exhibiting confinement energies exceeding 310 meV. The influence of growth interruption at both interfaces has been investigated by low-temperature photoluminescence. The critical role of the relative incorporation kinetics of arsenic and phosphorus atoms in determining the nature of the normal and inverted interfaces defining GaAs quantum wells is shown. An excitonic type recombination is evidenced by low-temperature-dependence photoluminescence measurements. Carrier capture is shown to be very efficient, even for the narrowest wells studied.