INGAP/GAAS SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

[1] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292

[2] HIGH-QUALITY QUANTUM WELLS OF INGAP GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2686 - 2688

[3] SIMULATION OF X-RAY DOUBLE-CRYSTAL ROCKING CURVES OF MULTIPLE AND INHOMOGENEOUS HETEROEPITAXIAL LAYERS [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1985, 18 (DEC) : 446 - 451

[4] OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L110 - L112

[5] PANISH MB, 1986, PROGR CRYSTAL GROWTH, V123, P1

[6] GROWTH OF INGAP ON GAAS USING GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 358 - 360

[7] HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4511 - 4514

[8] INGAP/INGAAIP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1713 - 1719

[9] HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1302 - 1304

[10] INTRINSIC STRAIN AT LATTICE-MATCHED GA0.47IN0.53AS/INP INTERFACES AS STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1920 - 1922

[1] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292

[2] HIGH-QUALITY QUANTUM WELLS OF INGAP GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2686 - 2688

[3] SIMULATION OF X-RAY DOUBLE-CRYSTAL ROCKING CURVES OF MULTIPLE AND INHOMOGENEOUS HETEROEPITAXIAL LAYERS [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1985, 18 (DEC) : 446 - 451

[4] OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L110 - L112

[5] PANISH MB, 1986, PROGR CRYSTAL GROWTH, V123, P1

[6] GROWTH OF INGAP ON GAAS USING GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 358 - 360

[7] HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4511 - 4514

[8] INGAP/INGAAIP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1713 - 1719

[9] HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1302 - 1304

[10] INTRINSIC STRAIN AT LATTICE-MATCHED GA0.47IN0.53AS/INP INTERFACES AS STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1920 - 1922