PHOTOELECTRIC PROPERTIES OF AMORPHOUS SILICON AND GERMANIUM FILMS

被引：1

作者：

FISCHER, JE

机构：

[1] UNIV PENN,MOORE SCH ELECT ENGN,PHILADELPHIA,PA 19174

[2] MICHELSON LAB,PHYS DIV,CHINA LAKE,CA 93555

来源：

THIN SOLID FILMS | 1973年 / 7卷 / 02期

关键词：

D O I：

10.1016/0040-6090(73)90130-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：223 / 229

页数：7

共 19 条

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[3] THEORY OF AMORPHOUS SEMICONDUCTORS [J].

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[5] A HIGH DENSITY FORM OF AMORPHOUS GE [J].

DONOVAN, TM ;

ASHLEY, EJ ;

SPICER, WE .

PHYSICS LETTERS A, 1970, A 32 (02) :85-&

[6] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J].

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HEINEMAN.K .

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[7]

DONOVAN TM, UNPUBLISHED RESULTS

[8]

Fischer J. E., 1971, Optics Communications, V3, P116, DOI 10.1016/0030-4018(71)90192-1

[9] ELECTROREFLECTANCE IN AMORPHOUS GERMANIUM REVISITED [J].

FISCHER, JE .

PHYSICAL REVIEW LETTERS, 1971, 27 (17) :1131-&

[10]

FISCHER JE, 1971, MAR P IRIS S UNC IR, P137

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