EFFECTS OF CONCURRENT IRRADIATION WITH IONS AND ELECTRONS ON ACCUMULATION PROCESS OF DAMAGE CASCADES IN GERMANIUM AND SILICON

被引：5

作者：

ABE, H ^{[1
]}

KINOSHITA, C ^{[1
]}

DENDA, Y ^{[1
]}

SONODA, T ^{[1
]}

机构：

[1] KYUSHU UNIV, DEPT NUCL ENGN, FUKUOKA 812, JAPAN

来源：

PROCEEDINGS OF THE JAPAN ACADEMY SERIES B-PHYSICAL AND BIOLOGICAL SCIENCES | 1993年 / 69卷 / 07期

关键词：

DAMAGE CASCADE; DUAL-BEAM IRRADIATION; CONCURRENT IRRADIATION EFFECT; GERMANIUM; SILICON;

D O I：

10.2183/pjab.69.173

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In-situ observation of Ge and Si has been performed under dual-beam irradiation with ions and electrons in the HVEM-accelerator facility at Kyushu University. Damage cascades show up their contrast and increase in number within a few seconds. The cascade contrast features accumulate with ion fluence, eventually leading to saturation. The saturated areal density decreases with increasing electron flux. Based on analyses using kinetic equations, it has been concluded that damage cascades show up their contrast through overlap or help from other damage cascades and that simultaneous electron irradiation eliminates damage cascades through the production of isolated point defects and irradiation-induced migration of point defects.

引用

页码：173 / 178

页数：6

共 10 条

[1] ACCUMULATION PROCESS OF CASCADES IN CERAMICS UNDER ION AND OR ELECTRON-IRRADIATION [J].