HIGH-RESOLUTION AND INSITU INVESTIGATION OF DEFECTS IN BI-IRRADIATED SI

被引：68

作者：

RUAULT, MO ^{[1
]}

CHAUMONT, J ^{[1
]}

PENISSON, JM ^{[1
]}

BOURRET, A ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1984年 / 50卷 / 05期

关键词：

D O I：

10.1080/01418618408237526

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：667 / 675

页数：9

共 11 条

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