TRAP LOCALIZATION IN THE ACTIVE LAYER OF GAAS MICROWAVE FETS

被引：5

作者：

MEIGNANT, D

BOCCONGIBOD, D

BOURGEOIS, JM

机构：

[1] Laboratoires d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3 Avenue Descartes

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 24期

关键词：

Electron traps; Hole traps; Schottky-gate field-effect transistors; Solid-state microwave devices;

D O I：

10.1049/el:19790554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The localisation of traps in the active layer of GaAs microwave m.e.s.f.e.t.s has been effected for two different epitaxial materials. The method used in this work was a transient measurement of source-drain voltage associated with a simple theoretical model. Our results indicate that electron traps are localised in the bulk of the epilayer whereas hole traps are localised at the epilayer/buffer-layer interface. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：779 / 780

页数：2

共 6 条

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J].

ADLERSTEIN, MG .

ELECTRONICS LETTERS, 1976, 12 (12) :297-298

[2] SUBMICROMETER SELF-ALIGNED GAAS MESFET [J].

BAUDET, P ;

BINET, M ;

BOCCONGIBOD, D .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :372-376

[3] DEVICE QUALITY GAAS GROWN AT LOW-TEMPERATURE BY HALIDE PROCESS [J].

HALLAIS, J ;

BOCCONGIBOD, D ;

CHANE, JP ;

DURAND, JM ;

HOLLAN, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) :1290-1294

[4]

HOLLAN L, 1975, 5TH P INT S GAAS DEA, P22

[5]

PONS D, UNPUBLISHED

[6]

YOKOYAMA N, 1976, I PHYSICS C SER B, V33, P201

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