PREPARATION OF B2O3-P2O5-SIO2 COATING FILMS BY THE SOL-GEL METHOD

被引:9
作者
MATSUDA, A [1 ]
TOHGE, N [1 ]
MINAMI, T [1 ]
机构
[1] UNIV OSAKA PREFECTURE, DEPT APPL CHEM, SAKAI, OSAKA 591, JAPAN
关键词
D O I
10.1007/BF01105125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The xB2O3.(20-x) P2O5.80SiO2 (in mol%) glass films with x = 0, 10 and 20 have been prepared from metal alkoxides by carrying out the coating in a dry atmosphere. These coating films have shown a larger value of load at scratch and a smaller shrinkage during heat-treatment by replacing P2O5 in the films with B2O3. It has been found that B2O3 more effectively reduces the glass transition temperature Of SiO2 glass than P2O5. The concentrations of sodium ions, which migrated from soda-lime-silica glass substrates during the film formation, were higher in phosphosilicate and borophosphosilicate films than in borosilicate and pure silica films. This finding should be ascribed to the gettering effects of phosphorus for sodium ions.
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收藏
页码:4189 / 4194
页数:6
相关论文
共 19 条
[1]   LOW-PRESSURE DEPOSITION OF DOPED SIO2 BY PYROLYSIS OF TETRAETHYLORTHOSILICATE (TEOS) .1. BORON AND PHOSPHORUS DOPED FILMS [J].
BECKER, FS ;
ROHL, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) :2923-2931
[3]   A LOW-PRESSURE BPSG DEPOSITION PROCESS [J].
FOSTER, T ;
HOEYE, G ;
GOLDMAN, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :505-507
[4]   INFRARED ABSORPTION SPECTRUM OF SILICON DIOXIDE [J].
HANNA, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1965, 48 (11) :595-&
[5]  
Kamiya K., 1978, Yogyo-Kyokai-Shi, V86, P552, DOI 10.2109/jcersj1950.86.999_552
[6]  
KAMIYA K, 1987, REP ASAHI GLASS F IN, V50, P149
[7]   GROWTH OF BOROSILICATE AND BOROPHOSPHOSILICATE FILMS AT LOW-PRESSURE AND TEMPERATURE [J].
LEARN, AJ .
THIN SOLID FILMS, 1985, 130 (1-2) :103-111
[8]   A NEW LPCVD TECHNIQUE OF PRODUCING BOROPHOSPHOSILICATE GLASS-FILMS BY INJECTION OF MISCIBLE LIQUID PRECURSORS [J].
LEVY, RA ;
GALLAGHER, PK ;
SCHREY, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :430-437
[9]  
MISATO Y, 1984, J ELECTROCHEM SOC, V131, P2619
[10]   SURFACE-CHARGES IN A ZNO-B2O3-SIO2 GLASS-SILICON SYSTEM [J].
MISAWA, Y ;
HACHINO, H ;
HARA, S ;
HANAZONO, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :359-361