PROXIMITY GETTERING OF HEAVY-METALS BY HIGH-ENERGY ION-IMPLANTATION

被引：40

作者：

KUROI, T ^{[1
]}

KAWASAKI, Y ^{[1
]}

KOMORI, S ^{[1
]}

FUKUMOTO, K ^{[1
]}

INUISHI, M ^{[1
]}

TSUKAMOTO, K ^{[1
]}

SHINYASHIKI, H ^{[1
]}

SHINGYOJI, T ^{[1
]}

机构：

[1] MITSUBISHI MAT CORP,CENT RES INST,OMIYA,SAITAMA 330,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SILICON; GETTERING; HEAVY METAL; CONTAMINATION; HIGH-ENERGY ION IMPLANTATION; JUNCTION LEAKAGE CURRENT; SECONDARY DEFECTS;

D O I：

10.1143/JJAP.32.303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

引用

页码：303 / 307

页数：5

共 13 条

[1] HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING [J].

BALDI, L ;

CEROFOLINI, G ;

FERLA, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :164-169

[2] BREAKDOWN IN SILICON-OXIDES CORRELATION WITH CU PRECIPITATES [J].

HONDA, K ;

OHSAWA, A ;

TOYOKURA, N .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :270-271

[3]

KUROI T, 1990, 22ND INT C SOL STAT, P441

[4]

KUROI T, 1990, 1990 TECH DIG INT EL, P261

[5]

LIEFTING JR, 1990, MATER RES SOC SYMP P, V157, P641

[6]

MATSUDA Y, 1987, 19TH C SOL STAT DEV, P23

[7]

MIYAZAKI M, 1989, JPN J APPL PHYS, V28, P51

[8]

NIKI Y, 1990, DEFECT CONTROL SEMIC, P297

[9] A RETROGRADE P-WELL FOR HIGHER DENSITY CMOS [J].

RUNG, RD ;

DELLOCA, CJ ;

WALKER, LG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1115-1119

[10] ALPHA-PARTICLE-INDUCED SOFT ERROR RATE IN VLSI CIRCUITS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

DENNARD, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :725-731

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