N-IN2O3-P-INP SOLAR-CELLS

被引：8

作者：

ITO, K

NAKAZAWA, T

机构：

[1] Department of Electronics, Faculty of Engineering, Shinshu University, Nagano

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90426-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photovoltaic effects at n-In2O3/p-InP heterojunctions which were formed by reactive evaporation of indium were investigated. An AM2 efficiency of the heterojunction solar cell reached 11.6% without additional antireflection coating. Responses were obtained in the range of wavelengths between 0.3 and 0.92 micro m. The In2O3 films used in the heterojunction can work not only as highly transparent and conductive surface layers but also as antireflection coatings. © 1979.

引用

页码：492 / 497

页数：6

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