THE CORRELATION OF VARIOUS PROPERTIES OF THIN-FILMS OF MOO3 AND OF THE MIXED-OXIDE SYSTEMS MOO3-IN2O3 AND MOO3-SIO

A discussion of the general properties of three systems of dielectric films i.e. MoO3 and the mixed oxide systems MoO3-In2O3 and MoO3-SiO is presented. Composition, film thickness, substrate deposition temperature and annealing all have a substantial effect on the structure and various properties of the films. The general properties of these three systems of dielectric films include analysis by X-ray photoelectron spectroscopy, UV-visible and infrared spectroscopy including the Fourier transform technique, electrical properties both d.c. and a.c. at both low and high fields and electron spin resonance. An attempt is made to show how the variations of properties depend on many disposable parameters. In particular the use of X-ray photoelectron spectroscopy shows how the local atomic and molecular bonding changes as a result of varying preparation parameters and this feature is a recent facility in the field of thin dielectric-semiconducting films. It is expected that the general discussion in this paper may help in the interpretation of results on other thin dielectric and semiconducting films. © 1990 Chapman and Hall Ltd.