CURRENT OSCILLATIONS IN N-TYPE GE AT LOW-TEMPERATURES

被引：7

作者：

DEBIASI, RS

YEE, SS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.1661165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：609 / +

页数：1

共 16 条

[1] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110

[2]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[3] LSA OSCILLATOR-DIODE THEORY [J].

COPELAND, JA .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3096-+

[4] BULK NEGATIVE DIFFERENTIAL CONDUCTANCE IN N-TYPE GERMANIUM AT LOW ELECTRIC FIELDS [J].

DEBIASI, RS ;

YEE, SS .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02) :256-&

[5] BULK NEGATIVE DIFFERENTIAL CONDUCTANCE IN HIGH-PURITY N-TYPE GERMANIUM [J].

DEBIASI, RS ;

YEE, SS .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3863-+

[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[7] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[8] PROPERTIES OF A FREE STEADILY TRAVELLING ELECTRICAL DOMAIN IN GAAS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (04) :300-+

[9] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].

HASTY, TE ;

STRATTON, R ;

JONES, EL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4623-+

[10] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) :819-+

← 1 2 →