CALCULATIONS OF ENERGY-LEVELS OF OXYGEN AND SILICON VACANCIES AT SI-SIO2 INTERFACE

被引：15

作者：

IIZUKA, T ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 01期

关键词：

D O I：

10.1143/JJAP.12.73

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：73 / 79

页数：7

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