ADVANCED TRANSPARENT CONDUCTIVE OXIDE ELECTRODE FOR OPTOELECTRONIC THIN-FILM DEVICES

被引:5
作者
HOHEISEL, M
HELLER, S
MROTZEK, C
MITWALSKY, A
机构
[1] Siemens AG, Corporate Research and Development, D-8000 München 83
关键词
D O I
10.1016/0038-1098(90)90286-K
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electrodes for optoelectronic thin-film devices must be conductive, optically transparent, and structurable by etching. The indium-tin-oxide (ITO) currently used fails to meet all these requirements. A new deposition sequence for ITO is therefore proposed. ITO films are grown reactively by magnetron sputtering from an indium/tin target. During the process, the oxygen partial pressure is varied periodically. We investigated the microstructure of these films by cross-sectional transmission electron microscopy (TEM) and show results of conductivity, optical absorption and etching behavior. © 1990.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 11 条
[11]   PRESSURE STABILITY IN REACTIVE MAGNETRON SPUTTERING [J].
SPENCER, AG ;
HOWSON, RP ;
LEWIN, RW .
THIN SOLID FILMS, 1988, 158 (01) :141-149