PRESSURE STABILITY IN REACTIVE MAGNETRON SPUTTERING

被引：49

作者：

SPENCER, AG

HOWSON, RP

LEWIN, RW

机构：

[1] Loughborough Univ of Technology, Loughborough, Engl, Loughborough Univ of Technology, Loughborough, Engl

来源：

关键词：

D O I：

10.1016/0040-6090(88)90310-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SPUTTERING

引用

页码：141 / 149

页数：9

共 16 条

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[3] DANVAC J, 1987, P INT S TRENDS NEW A, V2, P347
[4] TITANIUM CARBIDE THIN-FILMS OBTAINED BY REACTIVE MAGNETRON SPUTTERING
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[5] Glang LI, 1970, HDB THIN FILM TECHNO, P4
[6] REACTIVE ION PLATING OF TIO2
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[7] HOWSON RP, 1982, SPIE J, V325, P46
[8] HYSTERESIS EFFECT IN REACTIVE SPUTTERING - A PROBLEM OF SYSTEM STABILITY
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (09) : L187 - L190
[9] THE INFLUENCE OF SUBSTRATE-TEMPERATURE AND SPUTTERING GAS ATMOSPHERE ON THE ELECTRICAL-PROPERTIES OF REACTIVELY SPUTTERED INDIUM TIN OXIDE-FILMS
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[10] PENFOLD AS, 1986, 1986 AM SOC VAC COAT, P381