MODELING OF REACTIVE SPUTTERING OF COMPOUND MATERIALS

[1] MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (03): : 1275 - 1284

[2] THE USE OF NITROGEN FLOW AS A DEPOSITION RATE CONTROL IN REACTIVE SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 594 - 597

[3] MASS-FLOW LIMITATIONS IN REACTIVE SPUTTERING [J]. THIN SOLID FILMS, 1985, 130 (3-4) : 307 - 313

[4] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .3. A GENERAL PHENOMENOLOGICAL MODEL FOR REACTIVE SPUTTERING [J]. THIN SOLID FILMS, 1980, 69 (02) : 229 - 235

[5] HARRA DJ, 1967, NUOVO CIMENTO, V5, P56

[6] PREFERENTIAL IONIZATION IN REACTIVE SPUTTERING DISCHARGES [J]. THIN SOLID FILMS, 1984, 115 (03) : L45 - L48

[7] PARTIAL-PRESSURE CONTROL OF REACTIVELY SPUTTERED TITANIUM NITRIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 592 - 595

[8] INFLUENCE OF THE NITROGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC-SPUTTERED TITANIUM AND TITANIUM NITRIDE FILMS [J]. THIN SOLID FILMS, 1984, 111 (04) : 339 - 349

[9] VOLTAGE-CONTROLLED, REACTIVE PLANAR MAGNETRON SPUTTERING OF AIN THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 376 - 378

[10] REACTIVE HIGH-RATE DC SPUTTERING - DEPOSITION RATE, STOICHIOMETRY AND FEATURES OF TIOX AND TINX FILMS WITH RESPECT TO THE TARGET MODE [J]. THIN SOLID FILMS, 1984, 111 (03) : 259 - 268

[1] MECHANISMS OF VOLTAGE-CONTROLLED, REACTIVE, PLANAR MAGNETRON SPUTTERING OF AL IN AR-N2 AND AR-O2 ATMOSPHERES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1984, 2 (03): : 1275 - 1284

[2] THE USE OF NITROGEN FLOW AS A DEPOSITION RATE CONTROL IN REACTIVE SPUTTERING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 594 - 597

[3] MASS-FLOW LIMITATIONS IN REACTIVE SPUTTERING [J]. THIN SOLID FILMS, 1985, 130 (3-4) : 307 - 313

[4] MECHANISMS OF REACTIVE SPUTTERING OF INDIUM .3. A GENERAL PHENOMENOLOGICAL MODEL FOR REACTIVE SPUTTERING [J]. THIN SOLID FILMS, 1980, 69 (02) : 229 - 235

[5] HARRA DJ, 1967, NUOVO CIMENTO, V5, P56

[6] PREFERENTIAL IONIZATION IN REACTIVE SPUTTERING DISCHARGES [J]. THIN SOLID FILMS, 1984, 115 (03) : L45 - L48

[7] PARTIAL-PRESSURE CONTROL OF REACTIVELY SPUTTERED TITANIUM NITRIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 592 - 595

[8] INFLUENCE OF THE NITROGEN PARTIAL-PRESSURE ON THE PROPERTIES OF DC-SPUTTERED TITANIUM AND TITANIUM NITRIDE FILMS [J]. THIN SOLID FILMS, 1984, 111 (04) : 339 - 349

[9] VOLTAGE-CONTROLLED, REACTIVE PLANAR MAGNETRON SPUTTERING OF AIN THIN-FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 376 - 378

[10] REACTIVE HIGH-RATE DC SPUTTERING - DEPOSITION RATE, STOICHIOMETRY AND FEATURES OF TIOX AND TINX FILMS WITH RESPECT TO THE TARGET MODE [J]. THIN SOLID FILMS, 1984, 111 (03) : 259 - 268